High-brightness light-emitting diodes grown by MBE on ZnSe substrates

High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source.