Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz

The DC and RF characteristics of microwave power HBTs are described. Ultrahigh power-added efficiency is reported for AlGaAs-GaAs HBTs operating at 10 GHz in common-emitter (CE) and common-base (CB) modes. A record high 67.8% power-added efficiency with 11.6 dB associated gain was achieved with a CE HBT at a CW output power of 0.226 W, corresponding to a power density of 5.6 W/mm. With a CB HBT, 62.3% power-added efficiency with 11.85 dB gain and 0.385 W total CW power was demonstrated. Power saturation characteristics of CE and CB HBTs are compared. The importance of bias schemes is discussed. High-efficiency operation in near class B mode is described and compared with FET operation. An advantage of HBT over FET is the low leakage current during the off half cycle in class B operation. Stability conditions for CE and CB HBTs are discussed.<
>