Ion implantation by plasma immersion technique

Plasma immersion ion implantation (PIII) is technique for surface modification. In contrast to conventional ion implantation techniques the target is surrounded by the plasma and then pulse biased to high negative voltages. The plasma is generated in a rf source (13.56 MHz) and diffuses into the target processing chamber. In this paper we report on the influence of copper deposition effects on the implantation of oxygen and argon ions into a silicon target.