Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x/

Relaxed Si/sub 1-x/Ge/sub x/ layers with germanium contents of 0.04, 0.13, 0.24 and 0.36 have been grown by MBE and implanted under tightly controlled conditions with 2 MeV Si/sup +/ ions over the dose range 1/spl times/10/sup 10/ to 5/spl times/10/sup 10/ Si/sup +/ cm/sup -2/. The introduction rate and characteristics of simple defects have been investigated by EPR and DLTS whilst the accumulation of this damage with increasing dose has been followed by RBS, XTEM and optical depth profiling up to the onset of amorphisation. It is found that the integrated damage increases whilst the critical dose for amorphisation decreases with increasing Ge content.