Activation study of boron doped ion beam synthesised Si-Ge

Current IR sensor technology using SiGe layers on Si relies upon p/sup +/ doping of the SiGe layers. Consistent with selected area device production, IBS has been used to form Si/sub 0.9/Ge/sub 0.1/:B layers which were subsequently implanted with BF/sub 2/ to levels of 10/sup 21/ ions/cc. Using post-amorphisation techniques in conjunction with rapid thermal annealing at temperatures between 650 and 1050/spl deg/C, carrier concentrations in excess of 5/spl times/10/sup 20/ holes/cc have been achieved. In this paper, electrical results obtained by differential Hall effect and spreading resistance will be discussed in conjunction with structural studies using X-sectional TEM and ion channelling.