Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

Nanocrystals of SiGe alloy have been formed inside a SiO/sub 2/ matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion-beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.