Annealing effects on surface morphology of Si(100)

The temperature and time dependencies of Si(100) surface morphology have been investigated using in situ Auger Electron Spectroscopy and ex situ Atomic Force Microscopy. Surface carbon and oxygen concentrations are lowered below the detection limits of AES at /spl sim/900/spl deg/C while a roughening process starts before this temperature. The proportional relationship of Si(100) surface roughness to annealing temperature and time reflects that the annealing process is dominated by silicon surface evaporation. The abrupt decrease of surface roughness at above 1100/spl deg/C is attributed to the dissolution of SiC into the bulk.