TED of boron in presence of EOR defects: the role of the evolution of Si self-interstitial supersaturation between the loops

When End-Of-Range defects are located close or within doping profiles they render the diffusion "anomalous" by enhancing or reducing the dopant diffusivity. Upon annealing, the dislocation loops grow in size and reduce their density through the emission and capture of Si interstitial atoms by a coarsening process called Ostwald Ripening. In this paper, we report on how, by coupling the Ostwald Ripening theory to TEM observations or the time evolution of the loops upon annealing, quantitative information allowing the enhanced diffusivity to be understood can be extracted.