An accurate and computationally efficient model for phosphorus implants into (100) single-crystal silicon

In this paper is reported the first comprehensive, computationally efficient and highly accurate model for predicting phosphorus depth profiles for implants into (100) single-crystal silicon with explicit dependence on energy, dose, and tilt and rotation (twist) angles. This model has been implemented into the widely used process simulators, SUPREM3, SUPREM4 and FLOOPS.