A physical model for the role of dose and dose rate on amorphous depth generation

Evaluation of the increasing concentration of point defects during an implantation process is a necessary input for TCAD modeling of ultra-shallow junctions. This necessitates knowledge of the relaxation process, particularly of m, the fraction of point defects that survives in situ self-annihilation. Measurement of the /spl alpha//C interface depths for a series of Si doses was applied to the determination of m for various dose rates.