Bernas ion source for Genus Tandetron ion implanters

A Bernas type ion source has been developed for Genus high energy ion implanters. The new source increases output by 50% and lifetime by 100% for boron applications, compared to the standard Genus PIG ion source. Up to 49 mA of total beam has been extracted from a BF/sub 3/ plasma through an aperture, 7.0 mm in diameter, and 14 mA of analyzed boron current (/sup 11/B/sup +/) has been obtained. This is equivalent to providing a 85% margin above the specified boron current for Genus 1510 implanters. In this paper, the source configuration, output performance and lifetime are presented.