Compact broad beam ion implantation of 25 keV N/sup +/ in silicon

A very compact arrangement consisting of a broad beam ion source (Kaufman-ion-source) followed by a radio-frequency bandpass mass separator was used to generate a mass separated broad ion beam with an ion energy of 500 eV. After this, a second ion acceleration to 4, 8 or 16 keV takes place at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. As an example N/sup +/-implantation into silicon was carried out in the dose range from 10/sup 13/ to 10/sup 16/ cm/sup -2/. An analysis by Rutherford-Backscattering and Thermal Waves shows the implanted dose and the damage depth profile.