Advanced microwave ion source for 100 mA-class SIMOX ion implantation

To produce SIMOX wafers with high throughput, a compact and long lifetime microwave ion source for 100 mA-class oxygen ion implantation was newly developed. The ion source operated stably for more than 3 months with no maintenance under the beam extraction condition of 150 mA at 50 kV. When the source was installed in a SIMOX ion implanter, operation test showed that the ion source is suited to 100 mA-class ion implantation, giving volume production of high quality SIMOX wafers.