Characterization of hexagonal rare-earth aluminates for application in flash memories

We use Gate-Side Trap Spectroscopy by Charge Injection and Sensing (GS-TSCIS) and Post Program-Post Erase Discharge (PPD-PED) to characterize crystalline Al
₂
O
₃
and hexagonal rare-earth aluminates. The results show that high concentrations of electron traps are present close to the Al
₂
O
₃
/metal gate interface, whereas, in the hexagonal aluminates, the electron defect density is reduced, but the lower energetic barrier of these aluminates promotes a parasitic electron injection from the gate during erase.