C-V characteristics of SiO/sub 2/ thin films prepared by sol-gel method

SiO/sub 2/ thin films were prepared by the sol-gel method. The electrical characteristics of MOS structures with multilayer SiO/sub 2/ films were measured by means of a high frequency Capacitance-Voltage (C-V) method. Experiments show that there are many mobile ions and negative charge centers in SiO/sub 2/ films. The flat-band voltage V/sub FD/ shifts toward the positive side with increasing SiO/sub 2/ film porosity.