A Si2Sb2Te5 phase change memory featuring 27F2 cell size and ultra low writing current

A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si
2
Sb
2
Te
5
(SST) storage material into 0.13um standard CMOS technology and resulted from the high electrical resistances of the novel chalcogenide both in amorphous and crystalline state, which contribute greatly to the improved efficiency of heating process during both RESET and SET operation.