A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called “voltage-time dilemma” is simulated and studied. In addition, the various chemical and physical processes that produce these results are discussed. Finally, the simulated pattern is compared with experiments conducted on Cu/H
₂
O and Ag/Ag
₂
S systems.