The threshold voltage property research and structure design of MOSFET with stack-gate

A structure design of MOSFET with stack-gate is proposed in this paper, and the correctness of the normal NMOS threshold voltage through comparing the theoretical calculations and simulation results is tested and verified. Then, the MOSFET with stack-gate threshold voltage in different Channels is also simulated. The most obvious difference between stack-gate MOSFEL and single-gate MOSFET is the gate structure, which will inevitably cause changes in gate capacitance. And the gate capacitance is also analyzed in this paper.