Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

Resistive switching behaviors of Al
₂
O
₃
-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 10
⁵
) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al
₂
O
₃
-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.