Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by Using Full Wafer Bonding

We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.