10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTs

A transimpedance amplifier based on 0.7 /spl mu/m InAlAs/InGaAs/InP HEMTs and applicable for bit rates in the range of 2.5-10 Gb/s has been developed and realized. Compact chip layout guarantees extremely flat gain, linear phase and very small group delay time variations, respectively. Measured transimpedance is Z/sub TO/=51.6 dB/spl Omega/ (f/sub 3/ /sub dB/=8.5 GHz) for the 10 Gb/s version. Mean equivalent input noise current density is i/sub na/=7.98 pA//spl radic/(Hz) over the bandwidth 0/spl les/f/spl les/10 GHz. Calculated receiver sensitivity is /spl eta/P/sub min/=-24.1 dBm@10 Gb/s and BER=10/sup -9/.