RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process

In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel planar-type body-connected FinFET with 45 nm gate length, for which the DC behavior exhibits better I
_ON
-I
_OFF
current ratio and improved transconductance performance when compared with a planar-type FinFET. The RF characteristics are carried out as functions of gate voltage (V
_G
) and drain current (I
_D
) as well as the overdrive voltage (V
_OV
). In addition, the total gate capacitance (C
_gg
) is also reported.