Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate

In this study, we investigate the impact of thermal annealing on the electrical characteristics of epitaxial graphene field effect transistors. Top gated devices were fabricated from graphene obtained on silicon carbide (SiC) substrate. Thanks to an annealing at 300°C, the performance of the devices was enhanced by a factor of 90. The maximal transconductance reached really high values such as 5900μS/μm at V
_D
=3V, corresponding to a carrier mobility of 2230 cm
²
/V.s.