Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

A new technique for a separate extraction of the current-path-dependent resistance (R
_SD0
) from the contact-dependent source and drain resistances (R
_Se
and R
_De
) is reported for a single MOSFET. We also report a technique for a separation of V
_GS
-dependent source and drain resistance (R
_SDi
) from the V
_GS
- and L
_eff
-dependent channel resistance (R
_ch
) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R
_Se
= 10.5 - 12.4 Ω , R
_De
≅ 12.7 Ω, and R
_SD0
= 4.7 Ω for W = 10 μm. V
_GS
-dependent but L-independent R
_SDi
is extracted to be 2.8 - 4.2 Ω.