Non-destructive inline evaluation method for the gate insulator in the nodes beyond the 22nm generation

We propose a new reliability evaluation technology by using “Pulse-Photoconductivity Method” to measure the electrical and dielectrical properties of the insulator sample directly and non-destructively. We evaluate the electrical characteristics of SiO
₂
and HfO
₂
film by measuring the transient phenomenon of photoconductive signals and indicate the electrical leakage current vs the contaminated level of the sample insulator. The method is effective to the in-line process in next generation mass-production.