Optoelectronic properties in InAs/GaAs quantum dots arrays systems

A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations and different light polarization as well.