Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

SrTiO
₃
-based MIM capacitors were electrically characterized. Strontium titanate thin films were grown by atomic layer deposition using Sr(
ⁱ
Pr
₃
Cp)
₂
and (CpMe
₅
)Ti(OMe)
₃
as strontium and titanium precursors and H
₂
O and O
₃
as oxygen precursors. The temperatures used to grow the high-k films were 250 and 300 °C. The films were amorphous in the as-deposited state. The lowest CET values were achieved in the films grown using ozone at 300 °C. Leakage current is lower when samples were grown at 250 °C and when were grown using O
₃
as oxygen precursor.