Microwave annealing effect on the resistivity of doped hydrogenated amorphous silicon on glass

We employed a 5.8 GHz microwave annealing (MWA) to electrically activate the doped hydrogenated amorphous silicon (a-Si:H) thin films on glass. As compared with traditional rapid thermal annealing (RTA), MWA can electrically activate better the doped a-Si films at low annealing temperature and short processing time and effectively reduce their resistivity. The longer annealing time for MWA is better.