Asymmetrically-recessed nano-scale In0.52Al0.48As-In0.53Ga0.47As double-gate HEMT for high breakdown voltage

In this paper, a generalized analysis of Asymmetrically-Recessed Double Gate High Electron Mobility Transistor (DGHEMT) to realize high breakdown voltage is carried out. As with aggressive scaling in FETs the short-channel effects like V
_th
roll-off, degradation in cut-off frequency, transconductance etc becomes unavoidable at nanometer gate-length. Recently, DGHEMT has been proposed by Wichmann et. al. for improved performance and suppression of short-channel effects. Though short-channel effects have been effectively suppressed but the reliability analysis of DGHEMT remains unexplored. In this paper device parameters like potential, electric field profile, drain current have been studied for the improvement in breakdown voltage using Atlas Device simulator.