A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs

This work presents an analytical explicit compact model for Ultra-Thin Body (UTB) SOI MOSFETs. It is a simplification of a previously published model for Asymetrical Double Gate MOSFETs with independent gate operation. Excellent agreements were obtained with both TCAD simulations and electrical measurements. The usefulness of the model for parameter extraction of state of the devices is also demonstrated.