Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

In this paper we report our results from the process development and characterization of KMPR
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1025 as a complimentary metal-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR
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1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.