Coupling canceller maximum-likelihood (CCML) detection for multi-level cell NAND flash memory

In multi-level cell NAND flash memory system, the margin of each threshold voltage is narrower according as the number of bits per cell is increased, and the major factor degrading the performance of conventional threshold detection is coupling from neighbor cells. We propose a coupling canceller maximum-likelihood (CCML) detection for increasing the read performance of multi-level cell NAND flash memory.