A 63 GHz low-noise active balun with broadband phase-correction technique in 90 nm CMOS

This paper presents a low-noise active balun with broadband phase-correction. The proposed phase-correction structure is independent of operation frequency, and effectively suppresses phase deviation of active balun at millimeter-wave (MMW) band. Within the low noise current-reuse pre-amplifier, this active balun circuit can be employed as low-noise amplifier as well. This circuit is fabricated in 90nm low power CMOS technology with core area of 0.275 mm
²
. The measured phase error is less than 10 degrees from 50 GHz to 67 GHz, which demonstrates the robust calibration of phase error at MMW frequency. The measured voltage gain and noise figure at 63 GHz are 17.6 dB and 8.6 dB, respectively. The measured IIP3 is around -7 dBm. The core power consumption is 19 mW from 1.4 V supply voltage.