130-GHz gain-enhanced SiGe low noise amplifier

A 130 GHz low noise amplifier (LNA) in 0.13-μm SiGe BiCMOS technology has been designed and characterized. The gain-boosted cascode topology with 3D grounded-shielding structures is employed. The results showed that the LNA with a chip area of 400 μm × 900 μm, gain of ~17.5 dB with a 3-dB bandwidth of ~25 GHz, and noise figure of ~7.7 dB at 130 GHz with total dc power consumption of 31.5 mW has demonstrated.