High rate pulses from mode-locked semiconductor laser diodes with DBR

The dynamics of the establishment and stabilization of mode-locking have been investigated, and the ratio of the whole cavity length (L) to DBR length (L/sub DBR/) exerts a significant influence on harmonic mode locking when the facet reflectivities on the absorber and DBR sides of the laser diode are less than 30%. These results are in agreement with previous observations, and are reported here for the first time to the best of our knowledge. The mode-locked semiconductor laser diode length L, used in our simulations has gain section length (L/sub g/), absorber section length (L/sub l/), and DBR section length (L/sub DBR/). The gain and saturable absorber sections have the same modal index of 3.461, and are forward biased, and grounded or reverse biased respectively.