4H-SiC Junction Barrier Schottky diode with embedded P-layer

4H-SiC Junction Barrier Schottky diode with embedded P-layer (JBS-EPL) is reported in this paper. JBS-EPL has attractive advantages, such as remarkably increasing the breakdown voltage and decreasing the power loss and die area comparing with conventional Junction Barrier Schottky diode. The estimates for power loss and die area are proposed that can be used for evaluating the different structure design of power devices.