A high breakdown voltage and low switching loss GaN schottky diode using CHF3 plasma treatment

In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF
4
and CHF
3
treatment technology were proposed. The Schottky diode with 60sec CHF
3
plasma treated exhibits a high breakdown voltage of −352V, and a low reverse leakage current of 10
⁻⁷
A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF
3
plasma treated was promising in converter circuit applications.