Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs

The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600/spl deg/C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O.