The effect of Radon on soft error rates for wire bonded memories

The soft error rate of the wire bonded memory was not affected by the 3000X increase in the Radon concentration. The packaging material and thickness of the molding compound appear to provide a sufficient barrier to minimize Radon diffusion. Ambient Radon levels do not appear to contribute to current soft error rate observed in these devices. Follow up experiments may be completed on flip chip device to determine Radon would diffuse into the flip chip package.