A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

In this letter, a resistive random access memory based on Ni electrode/
$ \hbox{HfO}_{x}$
dielectric/
$\hbox{n}^{+}$
Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio
$( > \hbox{10}^{3})$
, good retention characteristics
$( > \hbox{10}^{5}\ \hbox{s}$
at
$\hbox{150}\ ^{\circ}\hbox{C}$
), satisfactory pulse switching endurance
$( > \hbox{10}^{5}\ \hbox{cycles})$
, and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.