Fabrication of $\hbox{La}_{0.7}\hbox{Sr}_{0.3} \hbox{MnO}_{3}$–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process

We report La
_0.7
Sr
_0.3
MnO
₃
(LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics.