Dilute nitride InSb1−xNx alloys for mid infrared detection

InSb
_1-x
N
_x
alloys on GaAs substrates are prepared by molecular beam epitaxy and in-situ thermal annealed at different temperatures in Sb ambience. InSb
_1-x
N
_x
photoconductors operating near 10 μm at 77 K are realized. The amount of N incorporation in Sb lattice sites is found to be dependent on the annealing temperature. These findings will benefit those working on mid-infrared photodetectors.