Recombination and loss mechanisms in GaNAsP/GaP QW lasers

In this paper the authors present a comprehensive study of the threshold current and its temperature dependence in novel direct band-gap Ga(NAsP)/GaP QW lasers which provide a potential route to lattice matched monolithic integration of long term stable semiconductor lasers on silicon. It is found that near room temperature, the threshold current is dominated by nonradiative recombination accounting for ~87% of the total threshold current density. A strong increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.