Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

Arsenic trisulfide (As
₂
S
₃
) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As
₂
S
₃
thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As
₂
S
₃
film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.