Computational study of graphene nanoribbon FETs for RF applications

The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.