Ultra-low power TFTs with 10 nm stacked gate insulator fabricated by nitric acid oxidation of Si (NAOS) method

We have succeeded in fabrication of ultra-low power poly-Si based thin film transistors (TFTs) with 10 nm gate insulators and 1 V driving voltage. An ultrathin interfacial SiO
₂
layer formed in 68 wt% nitric acid (HNO
₃
) aqueous solutions at 120°C decreases a gate leakage current by two orders of magnitude, resulting in a high on/off ratio of 10
⁹
.