Ge MOSFETs performance: Impact of Ge interface passivation

We have systematically investigated Ge interface passivation methods, and the highest electron (1920 cm
²
/Vs) and hole mobility (725 cm
²
/Vs) have been demonstrated by dramatic reduction of D
it
through the collaboration of self-passivation and valency passivation. In Si passivation, it is found that Si contributes to the upper half (worse) and lower one (better) in the bandgap differently. This study strongly suggests us that high performance Ge CMOS is really feasible.