High efficiency InxGa1−xN-based quantum well solar cell

This paper reports on the In
x
Ga
1−x
N-based quantum well (QW) cell as a promising candidate for future high efficiency solar cells. The performances of the proposed quantum well cell are assessed using an analytical model and different device parameters are optimized. A maximum efficiency of 36.49% is obtained with at an optimized band gap of 1.38 eV and at a well depth of 0.2eV. The effects of well number on short circuit current density, open circuit voltage and on the conversion efficiency of the In
x
Ga
1−x
N-based QW solar cell are also studied. The highest efficiency found for In
x
Ga
1−x
N-based QW cell for 35 well was 40.2% while for Al
x
Ga
1−x
As -based QW solar cell this was 35.55%. Comparison of In
x
Ga
1−x
N-based QW solar cell and Al
x
Ga
1−x
As -based QW solar cell implies that In
x
Ga
1−x
N-based quantum well cell offers the better efficiency.