SOG micromechanical resonator utilizing single crystal Si and CMOS ASIC

In this paper, a micromechanical resonator utilizing single crystal Si and CMOS ASIC is presented. First, the critical parameters are optimized by theoretical calculation and fine tuned by finite-element-analysis (FEM). Then, SOG-bulk micromachining and deep reactive ion etching (DRIE) are adopted to fabricate the resonator as well as a glass wafer is used as the substrate to support the device, metal interconnections and signal I/O. The structure size of the designed resonator is 0.46 mm × 0.34 mm with 3 um minimum gap. Finally, a modified pierce oscillator ASIC and a temperature compensative methodology is developed to accomplish fully integrated reference oscillator design.