Properties of the HgCdTe linear-mode e-APD

The band structure of Hg
_1-x
Cd
_x
Te results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5μm cutoff, Hg
_0.7
Cd
_0.3
Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.